B nano rotors

Mechanical engineering at the molecular level: Self-assembly of nano-rotors (w/ Video)

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B Re: Fwd: [Open Manufacturing] Re: Nanoengineer-1 Software

Thank you for your reply. You are one of the few people I have found in the world with an interest in Nanoengineer-1.

I am an engineer. My initial exposure was Tom Moore's blog http://machine-phase.blogspot.com/ This is the logical conclusion of our present technology. First I want to verify that NE1 reflects accurate results. Which I will be posting here. http://leenelsonengineer.blogspot.com/  While i continue to learn about packaging and programming I will use Windows to make some basic tests and have something to show for my efforts other than error codes. I want to see this software or something like it become part of a standard CAD package. The project has been idle for too long. It needs to be forked and continued, or rewritten.

I am also sending this to my blog - as it is engineering related. (opt out available -address not posted) Perhaps someone will see it and heed the call. http://technologiclee.blogspot.com/

Please keep me posted about any nanoengineering software.

Thanks,
lee nelson

On Tue, Aug 24, 2010 at 10:46 PM,

Hi Lee,

Sorry it took so long to respond, I've been busy with other things.

There are several backend simulators that NE-1 supports.  My NE-1
package has a requirement on the Free Software simulator package that's
available in Fedora, gromacs.  During my package testing I confirmed
that performing energy minimization on a simple molecule worked.

As for NE-1 itself, I tried it again on F-13 recently and the GUI hangs
on startup.  For now I'm going to withdraw the Fedora review request for
my NE-1 package since it's clear that upstream needs to stabilize before
the software is ready for wider distribution.  Unfortunately upstream is
currently dormant.

I'll leave my packages accessible on my website so that if upstream is
revived and stabilizes we'll have a good starting point for Fedora
integration.

BTW, I'm curious: what's your background?  What got you interested in
NanoEngineer-1?

Thomas

Lee Nelson <technologiclee@gmail.com> writes:

>     Thomas,
>
>     Does the Simulator for NE-1 work in Fedora?
>     I have the main program working, but it can not find a .so file in Ubuntu
>
>     thanks,
>     lee
>
>
>
>
> Here are my notes on the nanohive-1 install
>
> http://docs.google.com/Doc?docid=0AcY64lRR9IiPZGMyNjg4OXhfMTQ5ZGpyd2dmZ2g&hl=en

B Engineers turn the stickiness of gold nanoparticles into an advantage

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B Fwd: MEMS-talk Digest, Vol 92, Issue 7

---------- Forwarded message ----------
From: <mems-talk-request@memsnet.org>
Date: Jun 9, 2010 11:01 AM
Subject: MEMS-talk Digest, Vol 92, Issue 7
To: <mems-talk@memsnet.org>

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Today's Topics:

  1. Re: CF4 : O2 RIE of silicon, variability (Daniel Lloyd)
  2. Re: DRIE Simulator (javad sharifi)
  3. Re: CF4 : O2 RIE of silicon, variability (Jie Zou)


---------- Forwarded message ----------
From: "Daniel Lloyd" <DLloyd@laseroptical.co.uk>
To: "General MEMS discussion" <mems-talk@memsnet.org>, "tele992001@yahoo.com" <tele992001@yahoo.com>
Date: Tue, 08 Jun 2010 20:52:38 +0100
Subject: Re: [mems-talk] CF4 : O2 RIE of silicon, variability
Hi K.C,

Do you mean at various points on one sample or between different samples? I've found in the past that due to edge/loading effects the etch rates (and particularly selectivity's) can vary across a sample. In these instances its often apparent as a series of rings on the surface of different surface finishes. I have managed to minimise this by using recessed platens but I'm sure there are better ways- particularly on thinner wafers.

Daniel

-----Original Message-----
From: l j [mailto:tele992001@yahoo.com]
Sent: 08 June 2010 00:13
To: mems-talk@memsnet.org
Subject: [mems-talk] CF4 : O2 RIE of silicon, variability

Hello all,
 
I see great variablity in etch rate of silicon with RIE CF4:O2 etch.
 
At one point I see etch rate of >1um/min, at other <0.1um/min. This is at same proces parameter setting (1:12 O2:CF4 ratio, 0.2T, 500W).
 
Can anyone comment on what might casue such wide variability in etch rate at nominally constant process parameters?
 
Thanks in advance,
K.C.



---------- Forwarded message ----------
From: javad sharifi <m0j0sharifi@gmail.com>
To: General MEMS discussion <mems-talk@memsnet.org>
Date: Wed, 9 Jun 2010 01:42:25 +0430
Subject: Re: [mems-talk] DRIE Simulator
hi all, i need a simulator for mems.....can you introduce me ?


On 6/8/10, antwi nimo <nimoantwi1980@yahoo.com> wrote:
> Suprem.
>
> Suprem will not give you DRIE per say but etching in general. I dont know if
> there is a specific simulation tool to deal with DRIE exclusive to etching
> in general.
>
> My experience is that SUPREM works just fine for simulating etching mems
> materials.
>
> regards,
> Nimo



---------- Forwarded message ----------
From: Jie Zou <zoujiepku@gmail.com>
To: General MEMS discussion <mems-talk@memsnet.org>
Date: Tue, 8 Jun 2010 21:08:38 -0400
Subject: Re: [mems-talk] CF4 : O2 RIE of silicon, variability
You may also want to check whether your surface has a thin layer of
native oxide.

Jie

On Mon, Jun 7, 2010 at 7:12 PM, l j <tele992001@yahoo.com> wrote:
> Hello all,
>
> I see great variablity in etch rate of silicon with RIE CF4:O2 etch.
>
> At one point I see etch rate of >1um/min, at other <0.1um/min. This is at same proces parameter setting (1:12 O2:CF4 ratio, 0.2T, 500W).
>
> Can anyone comment on what might casue such wide variability in etch rate at nominally constant process parameters?
>
> Thanks in advance,
> K.C.
>

*  Zou Jie (Jay)
*  Department of Physics
*  University of Florida
*  Tel: +1-352-846-8018
*  Email: zoujiepku@gmail.com
*  Homepage: http://plaza.ufl.edu/zoujie/


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