B Fwd: MEMS-talk Digest, Vol 92, Issue 7

---------- Forwarded message ----------
From: <mems-talk-request@memsnet.org>
Date: Jun 9, 2010 11:01 AM
Subject: MEMS-talk Digest, Vol 92, Issue 7
To: <mems-talk@memsnet.org>

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Today's Topics:

  1. Re: CF4 : O2 RIE of silicon, variability (Daniel Lloyd)
  2. Re: DRIE Simulator (javad sharifi)
  3. Re: CF4 : O2 RIE of silicon, variability (Jie Zou)


---------- Forwarded message ----------
From: "Daniel Lloyd" <DLloyd@laseroptical.co.uk>
To: "General MEMS discussion" <mems-talk@memsnet.org>, "tele992001@yahoo.com" <tele992001@yahoo.com>
Date: Tue, 08 Jun 2010 20:52:38 +0100
Subject: Re: [mems-talk] CF4 : O2 RIE of silicon, variability
Hi K.C,

Do you mean at various points on one sample or between different samples? I've found in the past that due to edge/loading effects the etch rates (and particularly selectivity's) can vary across a sample. In these instances its often apparent as a series of rings on the surface of different surface finishes. I have managed to minimise this by using recessed platens but I'm sure there are better ways- particularly on thinner wafers.

Daniel

-----Original Message-----
From: l j [mailto:tele992001@yahoo.com]
Sent: 08 June 2010 00:13
To: mems-talk@memsnet.org
Subject: [mems-talk] CF4 : O2 RIE of silicon, variability

Hello all,
 
I see great variablity in etch rate of silicon with RIE CF4:O2 etch.
 
At one point I see etch rate of >1um/min, at other <0.1um/min. This is at same proces parameter setting (1:12 O2:CF4 ratio, 0.2T, 500W).
 
Can anyone comment on what might casue such wide variability in etch rate at nominally constant process parameters?
 
Thanks in advance,
K.C.



---------- Forwarded message ----------
From: javad sharifi <m0j0sharifi@gmail.com>
To: General MEMS discussion <mems-talk@memsnet.org>
Date: Wed, 9 Jun 2010 01:42:25 +0430
Subject: Re: [mems-talk] DRIE Simulator
hi all, i need a simulator for mems.....can you introduce me ?


On 6/8/10, antwi nimo <nimoantwi1980@yahoo.com> wrote:
> Suprem.
>
> Suprem will not give you DRIE per say but etching in general. I dont know if
> there is a specific simulation tool to deal with DRIE exclusive to etching
> in general.
>
> My experience is that SUPREM works just fine for simulating etching mems
> materials.
>
> regards,
> Nimo



---------- Forwarded message ----------
From: Jie Zou <zoujiepku@gmail.com>
To: General MEMS discussion <mems-talk@memsnet.org>
Date: Tue, 8 Jun 2010 21:08:38 -0400
Subject: Re: [mems-talk] CF4 : O2 RIE of silicon, variability
You may also want to check whether your surface has a thin layer of
native oxide.

Jie

On Mon, Jun 7, 2010 at 7:12 PM, l j <tele992001@yahoo.com> wrote:
> Hello all,
>
> I see great variablity in etch rate of silicon with RIE CF4:O2 etch.
>
> At one point I see etch rate of >1um/min, at other <0.1um/min. This is at same proces parameter setting (1:12 O2:CF4 ratio, 0.2T, 500W).
>
> Can anyone comment on what might casue such wide variability in etch rate at nominally constant process parameters?
>
> Thanks in advance,
> K.C.
>

*  Zou Jie (Jay)
*  Department of Physics
*  University of Florida
*  Tel: +1-352-846-8018
*  Email: zoujiepku@gmail.com
*  Homepage: http://plaza.ufl.edu/zoujie/


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